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This analog switch uses the 2N4860 JFET for its 25 ohm rON and low leakage. The LM102 serves as a voltage buffer. This circuit can be adapted to a dual trace oscilloscope chopper. ... device parameters are non-critical yet the circuit achieves. AN-32 FET Circuit Applications @ ...
Load Switch Basics Introduction High-Side Load Switches Protect Portable Electronic Systems Although we do our best to shield our portable devices from physical harm by using protective cases, or employing rugged design techniques, there is another layer of protection …
https://www.nxp.com/docs/en/white-paper/NXP_Load_Switch_Basics.pdf
ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. Notes a.
https://www.vishay.com/docs/91076/sihf9530.pdf
The load switch is controlled by the system, and connects or disconnects a voltage rail to a specific load. By turning unused circuitry off, the system as a whole can run more efficiently. The load switch provides a simple means to power a load when it is in demand and allows the system to maximize performance. Load Switch Basics
https://www.onsemi.com/pub/Collateral/AND9093-D.PDF
2.1 FET-based RF switch designs There exist three major FET switch topologies: series, shunt, and combinational. Combinational switches are common in cellular applications, as they tend to be less lossy than the alternatives. In Figure 2.1, a combinational switch is shown. When a control voltage is held high, the series FET for its corresponding
https://web.wpi.edu/Pubs/E-project/Available/E-project-042616-135537/unrestricted/RFSwitchMQPReport.pdf
P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a disadvantage compared to n-type silicon. Getting n-type performance out of p-type FETs has meant
https://www.vishay.com/docs/70611/70611.pdf